IRLR120NPBF
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Infineon Technologies IRLR120NPBF

Manufacturer No:
IRLR120NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLR120NPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 10A DPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:185mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IRLR120NPBF IRLR120PBF  
Manufacturer Infineon Technologies Vishay Siliconix
Product Status Discontinued at Digi-Key Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 5V
Rds On (Max) @ Id, Vgs 185mOhm @ 6A, 10V 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V 12 nC @ 5 V
Vgs (Max) ±16V ±10V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V 490 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 48W (Tc) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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