Infineon Technologies-IRLMS2002 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	30mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	22 nC @ 5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	1310 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2W (Ta)
Operating Temperature:	-
Mounting Type:	Surface Mount
Supplier Device Package:	Micro6™(SOT23-6)
Package / Case:	SOT-23-6

Infineon Technologies IRLMS2002