Infineon Technologies-IRLMS1902TRPBF - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.7V, 4.5V
Rds On (Max) @ Id, Vgs:	100mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id:	700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:	7 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	300 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	1.7W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	Micro6™(TSOP-6)
Package / Case:	SOT-23-6

Infineon Technologies IRLMS1902TRPBF