IRLML6401TR
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Infineon Technologies IRLML6401TR

Manufacturer No:
IRLML6401TR
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Datasheet:
IRLML6401TR Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 12V 4.3A SOT-23
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:50mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:830 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:Micro3™/SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number IRLML6401TR IRLML6402TR  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 50mOhm @ 4.3A, 4.5V 65mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 5 V 12 nC @ 5 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 10 V 633 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package Micro3™/SOT-23 Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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