IRLL024ZPBF
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Infineon Technologies IRLL024ZPBF

Manufacturer No:
IRLL024ZPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLL024ZPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 5A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:60mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number IRLL024ZPBF IRLR024ZPBF   IRLL024NPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 16A (Tc) 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 3A, 10V 58mOhm @ 9.6A, 10V 65mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 5 V 9.9 nC @ 5 V 15.6 nC @ 5 V
Vgs (Max) ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 25 V 380 pF @ 25 V 510 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1W (Ta) 35W (Tc) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 D-Pak SOT-223
Package / Case TO-261-4, TO-261AA TO-252-3, DPak (2 Leads + Tab), SC-63 TO-261-4, TO-261AA

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