Infineon Technologies-IRLL024NPBF-INF - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	65mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15.6 nC @ 5 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	510 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223
Package / Case:	TO-261-4, TO-261AA

Infineon Technologies IRLL024NPBF-INF