IRLIZ34N
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Infineon Technologies IRLIZ34N

Manufacturer No:
IRLIZ34N
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLIZ34N Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 22A TO220AB FP
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:35mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):37W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IRLIZ34N IRLIZ34G  
Manufacturer Infineon Technologies Vishay Siliconix
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 60 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 5V
Rds On (Max) @ Id, Vgs 35mOhm @ 12A, 10V 50mOhm @ 12A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 5 V 35 nC @ 5 V
Vgs (Max) ±16V ±10V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V 1600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 37W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP TO-220-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab

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