IRLIB4343
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Infineon Technologies IRLIB4343

Manufacturer No:
IRLIB4343
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLIB4343 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 19A TO220AB FP
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):39W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB Full-Pak
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IRLIB4343 IRLIB9343  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 4.7A, 10V 105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 47 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 50 V 660 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 39W (Tc) 33W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB Full-Pak TO-220AB Full-Pak
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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