IRLHS6342TR2PBF
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Infineon Technologies IRLHS6342TR2PBF

Manufacturer No:
IRLHS6342TR2PBF
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Datasheet:
IRLHS6342TR2PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 8.7A PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.7A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:15.5mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1019 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:6-PQFN (2x2)
Package / Case:6-PowerVDFN
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In Stock

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499

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Similar Products

Part Number IRLHS6342TR2PBF IRLHS6342TRPBF   IRLHS6242TR2PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 8.7A (Ta), 19A (Tc) 8.7A (Ta), 19A (Tc) 10A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 15.5mOhm @ 8.5A, 4.5V 15.5mOhm @ 8.5A, 4.5V 11.7mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10µA 1.1V @ 10µA 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V 11 nC @ 4.5 V 14 nC @ 4.5 V
Vgs (Max) - ±12V -
Input Capacitance (Ciss) (Max) @ Vds 1019 pF @ 25 V 1019 pF @ 25 V 1110 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) - 2.1W (Ta) -
Operating Temperature - -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-PQFN (2x2) 6-PQFN (2x2) 6-PQFN (2x2)
Package / Case 6-PowerVDFN 6-PowerVDFN 6-PowerVDFN

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