IRLHM630TR2PBF
  • Share:

Infineon Technologies IRLHM630TR2PBF

Manufacturer No:
IRLHM630TR2PBF
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Datasheet:
IRLHM630TR2PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 21A PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:3.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:3170 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:PQFN (3x3)
Package / Case:8-VQFN Exposed Pad
0 Remaining View Similar

In Stock

-
590

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRLHM630TR2PBF IRLHM630TRPBF   IRLHM620TR2PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 40A (Tc) 21A (Ta), 40A (Tc) 26A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 2.5V, 10V -
Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 4.5V 3.5mOhm @ 20A, 4.5V 2.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 50µA 1.1V @ 50µA 1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 4.5 V 62 nC @ 4.5 V 78 nC @ 4.5 V
Vgs (Max) - ±12V -
Input Capacitance (Ciss) (Max) @ Vds 3170 pF @ 25 V 3170 pF @ 25 V 3620 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) - 2.7W (Ta), 37W (Tc) -
Operating Temperature - -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PQFN (3x3) PQFN (3x3) PQFN (3x3)
Package / Case 8-VQFN Exposed Pad 8-VQFN Exposed Pad 8-VQFN Exposed Pad

Related Product By Categories

AOSP21321
AOSP21321
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 11A 8SOIC
IPP230N06L3G
IPP230N06L3G
Infineon Technologies
N-CHANNEL POWER MOSFET
HUFA76419D3ST
HUFA76419D3ST
Fairchild Semiconductor
N-CHANNEL LOGIC LEVEL ULTRAFET
BSP125H6433XTMA1
BSP125H6433XTMA1
Infineon Technologies
MOSFET N-CH 600V 120MA SOT223-4
TK60S10N1L,LXHQ
TK60S10N1L,LXHQ
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 60A DPAK
IPD95R750P7ATMA1
IPD95R750P7ATMA1
Infineon Technologies
MOSFET N-CH 950V 9A TO252-3
STP150N10F7AG
STP150N10F7AG
STMicroelectronics
N-CHANNEL 100 V STRIPFET F7 POWE
NTLJS3113PT1G
NTLJS3113PT1G
onsemi
MOSFET P-CH 20V 3.5A 6WDFN
IXTP50N085T
IXTP50N085T
IXYS
MOSFET N-CH 85V 50A TO220AB
RJK5030DPD-00#J2
RJK5030DPD-00#J2
Renesas Electronics America Inc
MOSFET N-CH 500V 5A MP3A
NDD60N745U1-35G
NDD60N745U1-35G
onsemi
MOSFET N-CH 600V 6.6A IPAK
AON7400B_101
AON7400B_101
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 18A/40A 8DFN

Related Product By Brand

BAR6304E6327HTSA1
BAR6304E6327HTSA1
Infineon Technologies
RF DIODE PIN 50V 250MW SOT23-3
IRF7380QTRPBF
IRF7380QTRPBF
Infineon Technologies
MOSFET 2N-CH 80V 3.6A 8-SOIC
BSO301SPHXUMA1
BSO301SPHXUMA1
Infineon Technologies
MOSFET P-CH 30V 12.6A 8DSO
IRF7207
IRF7207
Infineon Technologies
MOSFET P-CH 20V 5.4A 8SO
IGW60T120FKSA1
IGW60T120FKSA1
Infineon Technologies
IGBT TRENCH 1200V 100A TO247-3
XE162FN40F80LRABKXUMA1
XE162FN40F80LRABKXUMA1
Infineon Technologies
IC MCU 16BIT 320KB FLASH 64LQFP
PSB4450RV1.2
PSB4450RV1.2
Infineon Technologies
ANIC ANALOG NETWORK INTERFACE CI
IR22141SS
IR22141SS
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 24SSOP
CY7B991-5JC
CY7B991-5JC
Infineon Technologies
IC CLK BUFFER 8:8 80MHZ 32PLCC
MB90F387SPMT-GS-9001
MB90F387SPMT-GS-9001
Infineon Technologies
IC MCU 16BIT 64KB FLASH 48LQFP
MB90F897SPMCR-GS-T
MB90F897SPMCR-GS-T
Infineon Technologies
IC MCU 16BIT 64KB FLASH 48LQFP
MB91213APMC-GS-174E1
MB91213APMC-GS-174E1
Infineon Technologies
IC MCU 32BIT 544KB MROM 144LQFP