IRLH7134TR2PBF
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Infineon Technologies IRLH7134TR2PBF

Manufacturer No:
IRLH7134TR2PBF
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Datasheet:
IRLH7134TR2PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 26A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:26A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:3.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:3720 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number IRLH7134TR2PBF IRLH7134TRPBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 26A (Ta), 85A (Tc) 26A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 50A, 10V 3.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 4.5 V 58 nC @ 4.5 V
Vgs (Max) - ±16V
Input Capacitance (Ciss) (Max) @ Vds 3720 pF @ 25 V 3720 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 3.6W (Ta), 104W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

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