IRLBA1304
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Infineon Technologies IRLBA1304

Manufacturer No:
IRLBA1304
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRLBA1304 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 185A SUPER-220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:185A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 110A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:7660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:SUPER-220™ (TO-273AA)
Package / Case:TO-273AA
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Similar Products

Part Number IRLBA1304 IRLBA1304P   IRLBL1304  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 185A (Tc) 185A (Tc) 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 110A, 10V 4mOhm @ 110A, 10V 4.5mOhm @ 110A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 4.5 V 140 nC @ 4.5 V 140 nC @ 4.5 V
Vgs (Max) ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 7660 pF @ 25 V 7660 pF @ 25 V 7660 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package SUPER-220™ (TO-273AA) SUPER-220™ (TO-273AA) SUPER D2-PAK
Package / Case TO-273AA TO-273AA SUPER D2-PAK

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