IRL8113STRR
  • Share:

Infineon Technologies IRL8113STRR

Manufacturer No:
IRL8113STRR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRL8113STRR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 105A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:105A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2840 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
580

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRL8113STRR IRL8113STRL  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 105A (Tc) 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 21A, 10V 6mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V 35 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2840 pF @ 15 V 2840 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

APT11N80BC3G
APT11N80BC3G
Microchip Technology
MOSFET N-CH 800V 11A TO247
FQP9N50
FQP9N50
Fairchild Semiconductor
MOSFET N-CH 500V 9A TO220-3
PJD25N06A_L2_00001
PJD25N06A_L2_00001
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
SUP70030E-GE3
SUP70030E-GE3
Vishay Siliconix
MOSFET N-CH 100V 150A TO220AB
IRFH7932TRPBF
IRFH7932TRPBF
Infineon Technologies
MOSFET N-CH 30V 24A/104A PQFN
SISS06DN-T1-GE3
SISS06DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 47.6/172.6A PPAK
DMN1008UFDF-13
DMN1008UFDF-13
Diodes Incorporated
MOSFET N-CH 12V 12.2A 6UDFN
CSD22204W
CSD22204W
Texas Instruments
MOSFET P-CH 8V 5A 9DSBGA
BSZ0905PNSATMA1
BSZ0905PNSATMA1
Infineon Technologies
MOSFET P-CH 30V 40A TDSON-8
STP7NM50N
STP7NM50N
STMicroelectronics
MOSFET N-CH 500V 5A TO220AB
NTD4809NAT4G
NTD4809NAT4G
onsemi
MOSFET N-CH 30V 9.6A/58A DPAK
AOC2423
AOC2423
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 20V 2A 4ALPHADFN

Related Product By Brand

BAR6302WE6327
BAR6302WE6327
Infineon Technologies
PIN DIODE, 50V V(BR)
IDD15E60BUMA2
IDD15E60BUMA2
Infineon Technologies
DIODE GP 600V 29.2A TO252-3
BFR 360L3E6765
BFR 360L3E6765
Infineon Technologies
LOW-NOISE TRANSISTOR
BSP135L6906
BSP135L6906
Infineon Technologies
N-CHANNEL POWER MOSFET
IGA03N120H2XKSA1
IGA03N120H2XKSA1
Infineon Technologies
IGBT 1200V 3A 29W TO220-3
TCA505BGGEGXUMA1
TCA505BGGEGXUMA1
Infineon Technologies
IC SWITCH PROXIMITY INDCT 16DSO
TDA21241AUMA1
TDA21241AUMA1
Infineon Technologies
IC POWERSTAGE DRIVER 30IQFN
MB91661PMC-G-110-JNE1
MB91661PMC-G-110-JNE1
Infineon Technologies
IC MCU 32BIT 384KB MROM 120LQFP
MB95F778ENPMC1-G-106SNE2
MB95F778ENPMC1-G-106SNE2
Infineon Technologies
IC MCU 8BIT 60KB FLASH 64LQFP
S29GL064S80TFV010
S29GL064S80TFV010
Infineon Technologies
IC FLASH 64MBIT PARALLEL 56TSOP
CY7C1426KV18-250BZXC
CY7C1426KV18-250BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY9AF0B1KQN-G-101-JNERE1
CY9AF0B1KQN-G-101-JNERE1
Infineon Technologies
IC MEM MM MCU 48QFN