Infineon Technologies-IRL80HS120 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	32mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:	2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:	7 nC @ 4.5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	540 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	11.5W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-PQFN (2x2)
Package / Case:	6-VDFN Exposed Pad

Infineon Technologies IRL80HS120