Infineon Technologies-IRL6283MTRPBF - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	38A (Ta), 211A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	0.75mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	158 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	8292 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	2.1W (Ta), 63W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DIRECTFET™ MD
Package / Case:	DirectFET™ Isometric MD

Infineon Technologies IRL6283MTRPBF