IRL60SL216
  • Share:

Infineon Technologies IRL60SL216

Manufacturer No:
IRL60SL216
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL60SL216 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 195A TO262-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.95mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:255 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:15330 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$8.95
21

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRL60SL216 IRL60S216  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Last Time Buy Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.95mOhm @ 100A, 10V 1.95mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 255 nC @ 4.5 V 255 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 15330 pF @ 25 V 15330 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 375W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-262-3 PG-TO263-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

BSC0805LSATMA1
BSC0805LSATMA1
Infineon Technologies
MOSFET N-CH 100V 79A TDSON-8-6
PJC7400_R1_00001
PJC7400_R1_00001
Panjit International Inc.
SOT-323, MOSFET
RFD16N06LESM9A
RFD16N06LESM9A
onsemi
MOSFET N-CH 60V 16A TO252AA
STF40NF20
STF40NF20
STMicroelectronics
MOSFET N-CH 200V 40A TO220FP
IXTF1N450
IXTF1N450
IXYS
MOSFET N-CH 4500V 900MA I4PAC
SIJ470DP-T1-GE3
SIJ470DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 58.8A PPAK SO-8
IXFQ50N60P3
IXFQ50N60P3
IXYS
MOSFET N-CH 600V 50A TO3P
IXTA1R4N100PTRL
IXTA1R4N100PTRL
IXYS
MOSFET N-CH 1000V 1.4A TO263
BUK92150-55A,118
BUK92150-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 11A DPAK
FQPF13N50CT
FQPF13N50CT
onsemi
MOSFET N-CH 500V 13A TO220F
NTD4904N-1G
NTD4904N-1G
onsemi
MOSFET N-CH 30V 79A SGL IPAK
IPB80N06S4L05ATMA1
IPB80N06S4L05ATMA1
Infineon Technologies
MOSFET N-CH 60V 80A TO263-3

Related Product By Brand

BAS21E6327HTSA1
BAS21E6327HTSA1
Infineon Technologies
DIODE GP 200V 250MA SOT23-3
IDP30E60
IDP30E60
Infineon Technologies
IDP30E60 - SILICON POWER DIODE
IPI50R299CP
IPI50R299CP
Infineon Technologies
N-CHANNEL POWER MOSFET
IRLR120NPBF
IRLR120NPBF
Infineon Technologies
MOSFET N-CH 100V 10A DPAK
IRGP4063DPBF
IRGP4063DPBF
Infineon Technologies
IGBT TRENCH 600V 96A TO247AC
SAK-TC233L-32F200N AC
SAK-TC233L-32F200N AC
Infineon Technologies
IC MCU 32BIT 2MB FLASH 100TQFP
TLE52052GPAUMA1
TLE52052GPAUMA1
Infineon Technologies
IC MOTOR DRIVER 5.3V-40V 20DSO
BTT62001ENAXUMA1
BTT62001ENAXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TDSO-8
S25FL064LABMFI010
S25FL064LABMFI010
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 8SOIC
S26KL512SDABHV030
S26KL512SDABHV030
Infineon Technologies
IC FLASH 512MBIT PARALLEL 24FBGA
CYW20734UA1KFFB3G
CYW20734UA1KFFB3G
Infineon Technologies
IC RF TXRX+MCU BLUETOOTH 90TFBGA
CY8C4127LQI-BL453
CY8C4127LQI-BL453
Infineon Technologies
IC RF TXRX+MCU BLUETOOTH 56UFQFN