IRL5602S
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Infineon Technologies IRL5602S

Manufacturer No:
IRL5602S
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL5602S Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 24A D2PAK
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:42mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1460 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRL5602S IRL5602   IRL5602L  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 24A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 42mOhm @ 12A, 4.5V 42mOhm @ 12A, 4.5V 42mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V 44 nC @ 4.5 V 44 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 1460 pF @ 15 V 1460 pF @ 15 V 1460 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 75W (Tc) - -
Operating Temperature -55°C ~ 175°C (TJ) - -
Mounting Type Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK TO-220AB TO-262
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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