IRL520NS
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Infineon Technologies IRL520NS

Manufacturer No:
IRL520NS
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL520NS Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 10A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRL520NS IRL520S   IRL520NL  
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 9.2A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 5V 4V, 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 6A, 10V 270mOhm @ 5.5A, 5V 180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V 12 nC @ 5 V 20 nC @ 5 V
Vgs (Max) ±16V ±10V ±16V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V 490 pF @ 25 V 440 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 48W (Tc) 3.7W (Ta), 60W (Tc) 3.8W (Ta), 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole
Supplier Device Package D2PAK D²PAK (TO-263) TO-262
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA

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