Infineon Technologies-IRL40T209ATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	0.72mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	269 nC @ 4.5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	16000 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	500W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-HSOF-8-1
Package / Case:	8-PowerSFN

Infineon Technologies IRL40T209ATMA1