IRL40S212
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Infineon Technologies IRL40S212

Manufacturer No:
IRL40S212
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL40S212 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 195A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:137 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8320 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):231W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRL40S212 IRL40B212  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 150µA 2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 137 nC @ 4.5 V 137 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8320 pF @ 25 V 8320 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 231W (Tc) 231W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package PG-TO263-3 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3

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