IRL40B212
  • Share:

Infineon Technologies IRL40B212

Manufacturer No:
IRL40B212
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL40B212 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 195A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:137 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8320 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):231W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.42
144

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRL40B212 IRL40B215   IRL40S212  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Last Time Buy Last Time Buy Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 120A (Tc) 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V 2.7mOhm @ 98A, 10V 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 150µA 2.4V @ 100µA 2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 137 nC @ 4.5 V 84 nC @ 4.5 V 137 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8320 pF @ 25 V 5225 pF @ 25 V 8320 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 231W (Tc) 143W (Tc) 231W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package TO-220AB TO-220AB PG-TO263-3
Package / Case TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

PJL9415_R2_00001
PJL9415_R2_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
SPI12N50C3IN
SPI12N50C3IN
Infineon Technologies
N-CHANNEL POWER MOSFET
NTE2394
NTE2394
NTE Electronics, Inc
MOSFET N-CHANNEL 500V 14A TO3P
PHB191NQ06LT,118
PHB191NQ06LT,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A D2PAK
FCB11N60TM
FCB11N60TM
onsemi
MOSFET N-CH 600V 11A D2PAK
NTHL095N65S3HF
NTHL095N65S3HF
onsemi
MOSFET N-CH 650V 36A TO247-3
PHK5NQ15T518
PHK5NQ15T518
NXP USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
FQPF6N80
FQPF6N80
Fairchild Semiconductor
MOSFET N-CH 800V 3.3A TO220F
SSM3K37CT,L3F
SSM3K37CT,L3F
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 200MA CST3
IRFBC40
IRFBC40
Vishay Siliconix
MOSFET N-CH 600V 6.2A TO220AB
IRLR014NTRPBF
IRLR014NTRPBF
Infineon Technologies
MOSFET N-CH 55V 10A DPAK
AUIRLR024ZTRL
AUIRLR024ZTRL
Infineon Technologies
MOSFET N CH 55V 16A DPAK

Related Product By Brand

SN7002W E6327
SN7002W E6327
Infineon Technologies
MOSFET N-CH 60V 230MA SOT323-3
ADM6996LC-AC-T-1
ADM6996LC-AC-T-1
Infineon Technologies
LAN CONTROLLER
IR4426STRPBF
IR4426STRPBF
Infineon Technologies
IC GATE DRVR LOW-SIDE 8SOIC
BTS3160DNT
BTS3160DNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
CY9AFA44MBBGL-GE1
CY9AFA44MBBGL-GE1
Infineon Technologies
IC MCU 32BIT 288KB FLASH 96FBGA
S29GL128P11FFIV10
S29GL128P11FFIV10
Infineon Technologies
IC FLASH 128MBIT PARALLEL 64FBGA
CY62137EV30LL-45ZSXI
CY62137EV30LL-45ZSXI
Infineon Technologies
IC SRAM 2MBIT PARALLEL 44TSOP II
S25FL512SDSMFBG13
S25FL512SDSMFBG13
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC
CY7C1550KV18-400BZXC
CY7C1550KV18-400BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY7C1021CV33-15ZXCT
CY7C1021CV33-15ZXCT
Infineon Technologies
IC SRAM 1MBIT PARALLEL 44TSOP II
CY7C1312KV18-250BZC
CY7C1312KV18-250BZC
Infineon Technologies
NO WARRANTY
CYWUSB6935-48LFI
CYWUSB6935-48LFI
Infineon Technologies
IC RF TXRX ISM>1GHZ 48VFQFN