IRL3715ZPBF
  • Share:

Infineon Technologies IRL3715ZPBF

Manufacturer No:
IRL3715ZPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3715ZPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 50A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
464

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRL3715ZPBF IRL3715ZSPBF   IRL3705ZPBF   IRL3714ZPBF   IRL3715LPBF   IRL3715PBF   IRL3715SPBF   IRL3715ZLPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 55 V 20 V 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc) 75A (Tc) 36A (Tc) 54A (Tc) 54A (Tc) 54A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 15A, 10V 11mOhm @ 15A, 10V 8mOhm @ 52A, 10V 16mOhm @ 15A, 10V 14mOhm @ 26A, 10V 14mOhm @ 26A, 10V 14mOhm @ 26A, 10V 11mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250µA 2.55V @ 250µA 3V @ 250µA 2.55V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V 11 nC @ 4.5 V 60 nC @ 5 V 7.2 nC @ 4.5 V 17 nC @ 4.5 V 17 nC @ 4.5 V 17 nC @ 4.5 V 11 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±16V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 10 V 870 pF @ 10 V 2880 pF @ 25 V 550 pF @ 10 V 1060 pF @ 10 V 1060 pF @ 10 V 1060 pF @ 10 V 870 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 45W (Tc) 45W (Tc) 130W (Tc) 35W (Tc) 3.8W (Ta), 71W (Tc) 3.8W (Ta), 71W (Tc) 3.8W (Ta), 71W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Surface Mount Through Hole
Supplier Device Package TO-220AB D2PAK TO-220AB TO-220AB TO-262 TO-220AB D2PAK TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

CSD19506KCS
CSD19506KCS
Texas Instruments
MOSFET N-CH 80V 100A TO220-3
IPP100N08N3GXKSA1
IPP100N08N3GXKSA1
Infineon Technologies
MOSFET N-CH 80V 70A TO220-3
BSC059N04LSGATMA1
BSC059N04LSGATMA1
Infineon Technologies
MOSFET N-CH 40V 16A/73A TDSON
BSZ42DN25NS3GATMA1
BSZ42DN25NS3GATMA1
Infineon Technologies
MOSFET N-CH 250V 5A TSDSON-8
BUK7Y22-100E115
BUK7Y22-100E115
NXP USA Inc.
N-CHANNEL POWER MOSFET
IPD90N04S403ATMA1
IPD90N04S403ATMA1
Infineon Technologies
MOSFET N-CH 40V 90A TO252-3
FQB70N10TM
FQB70N10TM
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
PSMN1R5-50YLHX
PSMN1R5-50YLHX
Nexperia USA Inc.
PSMN1R5-50YLH/SOT1023/4 LEADS
STI33N60M6
STI33N60M6
STMicroelectronics
MOSFET N-CH 600V 25A I2PAK
NTD18N06T4G
NTD18N06T4G
onsemi
MOSFET N-CH 60V 18A DPAK
IPI100N08N3GHKSA1
IPI100N08N3GHKSA1
Infineon Technologies
MOSFET N-CH 80V 70A TO262-3
PHB145NQ06T,118
PHB145NQ06T,118
NXP USA Inc.
MOSFET N-CH 55V 75A D2PAK

Related Product By Brand

BAR6302WE6327
BAR6302WE6327
Infineon Technologies
PIN DIODE, 50V V(BR)
D770N14TXPSA1
D770N14TXPSA1
Infineon Technologies
DIODE GEN PURP 1.4KV 770A
IRF4905STRLPBF
IRF4905STRLPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
SPI07N65C3XKSA1
SPI07N65C3XKSA1
Infineon Technologies
N-CHANNEL POWER MOSFET
BSC120N03MSGATMA1
BSC120N03MSGATMA1
Infineon Technologies
MOSFET N-CH 30V 11A/39A TDSON
IR21368PBF
IR21368PBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28DIP
MB90214PF-GT-310-BND-AE1
MB90214PF-GT-310-BND-AE1
Infineon Technologies
IC MCU 16BIT 64KB MROM 80PQFP
CY14E101J2-SXIT
CY14E101J2-SXIT
Infineon Technologies
IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC
CY62256VLL-70ZC
CY62256VLL-70ZC
Infineon Technologies
IC SRAM 256KBIT PAR 28TSOP I
STK14CA8-RF35I
STK14CA8-RF35I
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 48SSOP
CY7C1543KV18-450BZC
CY7C1543KV18-450BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY7C11651KV18-400BZXC
CY7C11651KV18-400BZXC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA