IRL3715Z
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Infineon Technologies IRL3715Z

Manufacturer No:
IRL3715Z
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3715Z Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 50A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRL3715Z IRL3715ZS   IRL3715ZL   IRL3705Z   IRL3714Z   IRL3715   IRL3715L   IRL3715S  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 55 V 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc) 50A (Tc) 75A (Tc) 36A (Tc) 54A (Tc) 54A (Tc) 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 15A, 10V 11mOhm @ 15A, 10V 11mOhm @ 15A, 10V 8mOhm @ 52A, 10V 16mOhm @ 15A, 10V 14mOhm @ 26A, 10V 14mOhm @ 26A, 10V 14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250µA 2.55V @ 250µA 2.55V @ 250µA 3V @ 250µA 2.55V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V 11 nC @ 4.5 V 11 nC @ 4.5 V 60 nC @ 5 V 7.2 nC @ 4.5 V 17 nC @ 4.5 V 17 nC @ 4.5 V 17 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±16V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 10 V 870 pF @ 10 V 870 pF @ 10 V 2880 pF @ 25 V 550 pF @ 10 V 1060 pF @ 10 V 1060 pF @ 10 V 1060 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 45W (Tc) 45W (Tc) 45W (Tc) 130W (Tc) 35W (Tc) 3.8W (Ta), 71W (Tc) 3.8W (Ta), 71W (Tc) 3.8W (Ta), 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Through Hole Surface Mount
Supplier Device Package TO-220AB D2PAK TO-262 TO-220AB TO-220AB TO-220AB TO-262 D2PAK
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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