IRL3715SPBF
  • Share:

Infineon Technologies IRL3715SPBF

Manufacturer No:
IRL3715SPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3715SPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 54A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
416

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRL3715SPBF IRL3715ZSPBF   IRL3715ZPBF   IRL3716SPBF   IRL3713SPBF   IRL3714SPBF   IRL3715LPBF   IRL3715PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Discontinued at Digi-Key Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V 30 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 54A (Tc) 50A (Tc) 50A (Tc) 180A (Tc) 260A (Tc) 36A (Tc) 54A (Tc) 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 26A, 10V 11mOhm @ 15A, 10V 11mOhm @ 15A, 10V 4mOhm @ 90A, 10V 3mOhm @ 38A, 10V 20mOhm @ 18A, 10V 14mOhm @ 26A, 10V 14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.55V @ 250µA 2.55V @ 250µA 3V @ 250µA 2.5V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 11 nC @ 4.5 V 11 nC @ 4.5 V 79 nC @ 4.5 V 110 nC @ 4.5 V 9.7 nC @ 4.5 V 17 nC @ 4.5 V 17 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 10 V 870 pF @ 10 V 870 pF @ 10 V 5090 pF @ 10 V 5890 pF @ 15 V 670 pF @ 10 V 1060 pF @ 10 V 1060 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.8W (Ta), 71W (Tc) 45W (Tc) 45W (Tc) 210W (Tc) 330W (Tc) 47W (Tc) 3.8W (Ta), 71W (Tc) 3.8W (Ta), 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK D2PAK TO-220AB D2PAK D2PAK D2PAK TO-262 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

Related Product By Categories

DN2540N3-G
DN2540N3-G
Microchip Technology
MOSFET N-CH 400V 120MA TO92
AOT66920L
AOT66920L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 22.5A/80A TO220
SIHP120N60E-GE3
SIHP120N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 25A TO220AB
FDZ204P
FDZ204P
Fairchild Semiconductor
MOSFET P-CH 20V 4.5A 9BGA
MTP1N60E
MTP1N60E
onsemi
N-CHANNEL POWER MOSFET
PJQ4463AP-AU_R2_000A1
PJQ4463AP-AU_R2_000A1
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
IPA65R380C6XKSA1
IPA65R380C6XKSA1
Infineon Technologies
MOSFET N-CH 650V 10.6A TO220
FDMS7578
FDMS7578
Fairchild Semiconductor
MOSFET N-CH 25V 17A/28A 8PQFN
2SK2866(F)
2SK2866(F)
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 10A TO220AB
BSS670S2LL6327HTSA1
BSS670S2LL6327HTSA1
Infineon Technologies
MOSFET N-CH 55V 540MA SOT23-3
SI4858DY-T1-E3
SI4858DY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 13A 8SO
SI5449DC-T1-GE3
SI5449DC-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 3.1A 1206-8

Related Product By Brand

BCX6816E6327HTSA1
BCX6816E6327HTSA1
Infineon Technologies
TRANS NPN 20V 1A SOT89
PTFA043002E V1
PTFA043002E V1
Infineon Technologies
IC FET RF LDMOS 300W H-30275-4
IRF6715MTRPBF
IRF6715MTRPBF
Infineon Technologies
MOSFET N-CH 25V 34A DIRECTFET
SPU21N05L
SPU21N05L
Infineon Technologies
N-CHANNEL POWER MOSFET
IPW60R070P6
IPW60R070P6
Infineon Technologies
600V, 0.07OHM, N-CHANNEL MOSFET,
CY27410FLTXI
CY27410FLTXI
Infineon Technologies
IC CLOCK GENERATOR 48QFN
CY8CTMA884LTI-12
CY8CTMA884LTI-12
Infineon Technologies
IC TRUETOUCH CAPSENSE QFN
MB89637PF-GT-1255-BND
MB89637PF-GT-1255-BND
Infineon Technologies
IC MCU 8BIT 32KB MROM 64QFP
CYV15G0403TB-BGC
CYV15G0403TB-BGC
Infineon Technologies
IC SERIALIZER HOTLINK II 256LBGA
CY7C12631KV18-400BZI
CY7C12631KV18-400BZI
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY7C12451KV18-400BZXC
CY7C12451KV18-400BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY7C1565KV18-500BZI
CY7C1565KV18-500BZI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA