IRL3715SPBF
  • Share:

Infineon Technologies IRL3715SPBF

Manufacturer No:
IRL3715SPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3715SPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 54A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
416

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRL3715SPBF IRL3715ZSPBF   IRL3715ZPBF   IRL3716SPBF   IRL3713SPBF   IRL3714SPBF   IRL3715LPBF   IRL3715PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Discontinued at Digi-Key Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V 30 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 54A (Tc) 50A (Tc) 50A (Tc) 180A (Tc) 260A (Tc) 36A (Tc) 54A (Tc) 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 26A, 10V 11mOhm @ 15A, 10V 11mOhm @ 15A, 10V 4mOhm @ 90A, 10V 3mOhm @ 38A, 10V 20mOhm @ 18A, 10V 14mOhm @ 26A, 10V 14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.55V @ 250µA 2.55V @ 250µA 3V @ 250µA 2.5V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 11 nC @ 4.5 V 11 nC @ 4.5 V 79 nC @ 4.5 V 110 nC @ 4.5 V 9.7 nC @ 4.5 V 17 nC @ 4.5 V 17 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 10 V 870 pF @ 10 V 870 pF @ 10 V 5090 pF @ 10 V 5890 pF @ 15 V 670 pF @ 10 V 1060 pF @ 10 V 1060 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.8W (Ta), 71W (Tc) 45W (Tc) 45W (Tc) 210W (Tc) 330W (Tc) 47W (Tc) 3.8W (Ta), 71W (Tc) 3.8W (Ta), 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK D2PAK TO-220AB D2PAK D2PAK D2PAK TO-262 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

Related Product By Categories

MTB60N05HDLT4
MTB60N05HDLT4
onsemi
N-CHANNEL POWER MOSFET
DMP32D4SFB-7B
DMP32D4SFB-7B
Diodes Incorporated
MOSFET P-CH 30V 400MA 3DFN
FDMC8360LET40
FDMC8360LET40
onsemi
MOSFET N-CH 40V 27A/141A POWER33
IRFBF20STRLPBF
IRFBF20STRLPBF
Vishay Siliconix
MOSFET N-CH 900V 1.7A D2PAK
NTMJS0D8N04CLTWG
NTMJS0D8N04CLTWG
onsemi
MOSFET N-CH 40V 56A/368A 8LFPAK
IXTQ44N50P
IXTQ44N50P
IXYS
MOSFET N-CH 500V 44A TO3P
SPB80N03S2L-06 G
SPB80N03S2L-06 G
Infineon Technologies
MOSFET N-CH 30V 80A TO263-3
FQD19N10TM_F080
FQD19N10TM_F080
onsemi
MOSFET N-CH 100V 15.6A DPAK
TPH3208LSG
TPH3208LSG
Transphorm
GANFET N-CH 650V 20A 3PQFN
PSMN005-55P,127
PSMN005-55P,127
NXP USA Inc.
MOSFET N-CH 55V 75A TO220AB
PH16030L,115
PH16030L,115
NXP USA Inc.
MOSFET N-CH 30V 38A LFPAK56
SCT2080KEGC11
SCT2080KEGC11
Rohm Semiconductor
DIODE N-CH 1200V 40A TO-247AC

Related Product By Brand

IRFB7730PBF
IRFB7730PBF
Infineon Technologies
MOSFET N-CH 75V 195A TO220AB
IPA030N10NF2SXKSA1
IPA030N10NF2SXKSA1
Infineon Technologies
TRENCH >=100V PG-TO220-3
IRF3717TRPBF
IRF3717TRPBF
Infineon Technologies
MOSFET N-CH 20V 20A 8SO
IRFP064VPBF
IRFP064VPBF
Infineon Technologies
MOSFET N-CH 60V 130A TO247AC
IRF7707TRPBF
IRF7707TRPBF
Infineon Technologies
MOSFET P-CH 20V 7A 8TSSOP
IRFR3504TRPBF
IRFR3504TRPBF
Infineon Technologies
MOSFET N-CH 40V 30A DPAK
IKW03N120H2FKSA1
IKW03N120H2FKSA1
Infineon Technologies
IGBT 1200V 9.6A 62.5W TO247-3
IRSF3021L
IRSF3021L
Infineon Technologies
IC PWR DRIVER N-CHAN 1:1 SOT223
CY8CTMA140-LQI-01T
CY8CTMA140-LQI-01T
Infineon Technologies
IC TRUETOUCH CAPSENSE 36QFN
MB89695BPFM-G-204-BND
MB89695BPFM-G-204-BND
Infineon Technologies
IC MCU 8BIT FFMC-8L-0.5 64LQFP
MB95F634KPMC-G-SN-YE2
MB95F634KPMC-G-SN-YE2
Infineon Technologies
IC MCU 8BIT 20KB FLASH 32LQFP
CY14B101LA-BA45XI
CY14B101LA-BA45XI
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 48FBGA