IRL3715SPBF
  • Share:

Infineon Technologies IRL3715SPBF

Manufacturer No:
IRL3715SPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3715SPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 54A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
416

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRL3715SPBF IRL3715ZSPBF   IRL3715ZPBF   IRL3716SPBF   IRL3713SPBF   IRL3714SPBF   IRL3715LPBF   IRL3715PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Discontinued at Digi-Key Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V 30 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 54A (Tc) 50A (Tc) 50A (Tc) 180A (Tc) 260A (Tc) 36A (Tc) 54A (Tc) 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 26A, 10V 11mOhm @ 15A, 10V 11mOhm @ 15A, 10V 4mOhm @ 90A, 10V 3mOhm @ 38A, 10V 20mOhm @ 18A, 10V 14mOhm @ 26A, 10V 14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.55V @ 250µA 2.55V @ 250µA 3V @ 250µA 2.5V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 11 nC @ 4.5 V 11 nC @ 4.5 V 79 nC @ 4.5 V 110 nC @ 4.5 V 9.7 nC @ 4.5 V 17 nC @ 4.5 V 17 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 10 V 870 pF @ 10 V 870 pF @ 10 V 5090 pF @ 10 V 5890 pF @ 15 V 670 pF @ 10 V 1060 pF @ 10 V 1060 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.8W (Ta), 71W (Tc) 45W (Tc) 45W (Tc) 210W (Tc) 330W (Tc) 47W (Tc) 3.8W (Ta), 71W (Tc) 3.8W (Ta), 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK D2PAK TO-220AB D2PAK D2PAK D2PAK TO-262 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

Related Product By Categories

PSMN1R5-40PS,127
PSMN1R5-40PS,127
Nexperia USA Inc.
MOSFET N-CH 40V 120A TO220AB
HUF76619D3S
HUF76619D3S
Fairchild Semiconductor
MOSFET N-CH 100V 18A TO252AA
FDB8896-F085
FDB8896-F085
Fairchild Semiconductor
19A, 30V, 0.0068OHM, N-CHANNEL,
SIUD401ED-T1-GE3
SIUD401ED-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 500MA PPAK 0806
IRF6613TRPBF
IRF6613TRPBF
Infineon Technologies
MOSFET N-CH 40V 23A DIRECTFET
RM42P30DN
RM42P30DN
Rectron USA
MOSFET P-CHANNEL 30V 42A 8DFN
IPB60R160P6ATMA1
IPB60R160P6ATMA1
Infineon Technologies
MOSFET N-CH 600V 23.8A D2PAK
IXTH270N04T4
IXTH270N04T4
IXYS
MOSFET N-CH 40V 270A TO247
APT56M50B2
APT56M50B2
Microchip Technology
MOSFET N-CH 500V 56A T-MAX
APT26F120B2
APT26F120B2
Microchip Technology
MOSFET N-CH 1200V 27A T-MAX
STD65N3LLH5
STD65N3LLH5
STMicroelectronics
MOSFET N CH 30V 65A DPAK
RJK4532DPD-00#J2
RJK4532DPD-00#J2
Renesas Electronics America Inc
MOSFET N-CH 450V 4A MP3A

Related Product By Brand

DCSHIELDBTN7030TOBO1
DCSHIELDBTN7030TOBO1
Infineon Technologies
DC-SHIELD_BTN7030
BAT6202LSE6327XTSA1
BAT6202LSE6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 40V 100MW TSSLP-2
D2200N24TVFPRXPSA1
D2200N24TVFPRXPSA1
Infineon Technologies
DIODE GEN PURP 2.4KV 2200A
STT1400N18P55XPSA1
STT1400N18P55XPSA1
Infineon Technologies
THYR / DIODE MODULE DK
IRF7241TRPBF
IRF7241TRPBF
Infineon Technologies
MOSFET P-CH 40V 6.2A 8SO
IRFU3410PBF
IRFU3410PBF
Infineon Technologies
MOSFET N-CH 100V 31A IPAK
IPB45N06S409ATMA1
IPB45N06S409ATMA1
Infineon Technologies
MOSFET N-CH 60V 45A TO263-3
PEB20320H-V34
PEB20320H-V34
Infineon Technologies
IC TELECOM INTERFACE 160-MQFP
1EDI05I12AFXUMA1
1EDI05I12AFXUMA1
Infineon Technologies
IC IGBT DVR 1200V DSO8
MB90024PMT-GS-233
MB90024PMT-GS-233
Infineon Technologies
IC MCU 120LQFP
S25FL256SAGMFIG03
S25FL256SAGMFIG03
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 16SOIC
CY7C1061GN18-15ZSXI
CY7C1061GN18-15ZSXI
Infineon Technologies
IC SRAM 16MBIT PAR 54TSOP II