IRL3715LPBF
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Infineon Technologies IRL3715LPBF

Manufacturer No:
IRL3715LPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3715LPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 54A TO262
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IRL3715LPBF IRL3716LPBF   IRL3715PBF   IRL3715SPBF   IRL3715ZLPBF   IRL3715ZPBF   IRL3714LPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 54A (Tc) 180A (Tc) 54A (Tc) 54A (Tc) 50A (Tc) 50A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 26A, 10V 4mOhm @ 90A, 10V 14mOhm @ 26A, 10V 14mOhm @ 26A, 10V 11mOhm @ 15A, 10V 11mOhm @ 15A, 10V 20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 2.55V @ 250µA 2.55V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 79 nC @ 4.5 V 17 nC @ 4.5 V 17 nC @ 4.5 V 11 nC @ 4.5 V 11 nC @ 4.5 V 9.7 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 10 V 5090 pF @ 10 V 1060 pF @ 10 V 1060 pF @ 10 V 870 pF @ 10 V 870 pF @ 10 V 670 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.8W (Ta), 71W (Tc) 210W (Tc) 3.8W (Ta), 71W (Tc) 3.8W (Ta), 71W (Tc) 45W (Tc) 45W (Tc) 47W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-262 TO-262 TO-220AB D2PAK TO-262 TO-220AB TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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