IRL3715LPBF
  • Share:

Infineon Technologies IRL3715LPBF

Manufacturer No:
IRL3715LPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3715LPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 54A TO262
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

-
100

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRL3715LPBF IRL3716LPBF   IRL3715PBF   IRL3715SPBF   IRL3715ZLPBF   IRL3715ZPBF   IRL3714LPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 54A (Tc) 180A (Tc) 54A (Tc) 54A (Tc) 50A (Tc) 50A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 26A, 10V 4mOhm @ 90A, 10V 14mOhm @ 26A, 10V 14mOhm @ 26A, 10V 11mOhm @ 15A, 10V 11mOhm @ 15A, 10V 20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 2.55V @ 250µA 2.55V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 79 nC @ 4.5 V 17 nC @ 4.5 V 17 nC @ 4.5 V 11 nC @ 4.5 V 11 nC @ 4.5 V 9.7 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 10 V 5090 pF @ 10 V 1060 pF @ 10 V 1060 pF @ 10 V 870 pF @ 10 V 870 pF @ 10 V 670 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.8W (Ta), 71W (Tc) 210W (Tc) 3.8W (Ta), 71W (Tc) 3.8W (Ta), 71W (Tc) 45W (Tc) 45W (Tc) 47W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-262 TO-262 TO-220AB D2PAK TO-262 TO-220AB TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

ECH8410-TL-H
ECH8410-TL-H
Sanyo
MOSFET N-CH 30V 12A SOT28FL/ECH8
FQAF27N25
FQAF27N25
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
BSS84,215
BSS84,215
Nexperia USA Inc.
MOSFET P-CH 50V 130MA TO236AB
ZVNL120GTA
ZVNL120GTA
Diodes Incorporated
MOSFET N-CH 200V 320MA SOT223
DMTH4008LFDFWQ-7
DMTH4008LFDFWQ-7
Diodes Incorporated
MOSFET N-CH 40V 11.6A 6UDFN
SPP35N10
SPP35N10
Infineon Technologies
MOSFET N-CH 100V 35A TO220-3
AOD452
AOD452
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 25V 55A TO252
FQPF13N50CT
FQPF13N50CT
onsemi
MOSFET N-CH 500V 13A TO220F
STI23NM60ND
STI23NM60ND
STMicroelectronics
MOSFET N-CH 600V 19.5A I2PAK
IRF7815PBF
IRF7815PBF
Infineon Technologies
MOSFET N-CH 150V 5.1A 8SO
SI1405BDH-T1-GE3
SI1405BDH-T1-GE3
Vishay Siliconix
MOSFET P-CH 8V 1.6A SC70-6
PJD4NA60_L2_00001
PJD4NA60_L2_00001
Panjit International Inc.
600V N-CHANNEL MOSFET

Related Product By Brand

ESD3V3XU1BLE6327XTSA1
ESD3V3XU1BLE6327XTSA1
Infineon Technologies
TRANS VOLTAGE SUPPRESSOR DIODE
BC 846BW H6327
BC 846BW H6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT323
IPAN80R450P7XKSA1
IPAN80R450P7XKSA1
Infineon Technologies
MOSFET N-CH 800V 11A TO220-3-31
BSS138N-E6327
BSS138N-E6327
Infineon Technologies
MOSFET N-CH 60V 230MA SOT23-3
XMC4700F144K1536AAXQMA1
XMC4700F144K1536AAXQMA1
Infineon Technologies
IC MCU 32BIT 1.5MB FLASH 144LQFP
XMC1100T016F0008AAXUMA1
XMC1100T016F0008AAXUMA1
Infineon Technologies
IC MCU 32BIT 8KB FLASH 16TSSOP
BTS7741GNUMA1
BTS7741GNUMA1
Infineon Technologies
IC BRIDGE DRIVER PAR 28DSO
CY8CTMG200-48LTXI
CY8CTMG200-48LTXI
Infineon Technologies
IC MCU 32K FLASH 48-QFN
CY9BF305RBPMC-G-JNE2
CY9BF305RBPMC-G-JNE2
Infineon Technologies
IC MCU 32BIT 384KB FLASH 120LQFP
FM28V020-TG
FM28V020-TG
Infineon Technologies
IC FRAM 256KBIT PAR 32TSOP I
CY7C2265KV18-550BZXC
CY7C2265KV18-550BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY7C1570KV18-450BZXC
CY7C1570KV18-450BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA