IRL3714SPBF
  • Share:

Infineon Technologies IRL3714SPBF

Manufacturer No:
IRL3714SPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3714SPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 36A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):47W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
99

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRL3714SPBF IRL3715SPBF   IRL3714ZPBF   IRL3714ZSPBF   IRL3716SPBF   IRL3713SPBF   IRL3714LPBF   IRL3714PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Discontinued at Digi-Key Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V 20 V 30 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 54A (Tc) 36A (Tc) 36A (Tc) 180A (Tc) 260A (Tc) 36A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 18A, 10V 14mOhm @ 26A, 10V 16mOhm @ 15A, 10V 16mOhm @ 15A, 10V 4mOhm @ 90A, 10V 3mOhm @ 38A, 10V 20mOhm @ 18A, 10V 20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 2.55V @ 250µA 2.55V @ 250µA 3V @ 250µA 2.5V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 4.5 V 17 nC @ 4.5 V 7.2 nC @ 4.5 V 7.2 nC @ 4.5 V 79 nC @ 4.5 V 110 nC @ 4.5 V 9.7 nC @ 4.5 V 9.7 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 10 V 1060 pF @ 10 V 550 pF @ 10 V 550 pF @ 10 V 5090 pF @ 10 V 5890 pF @ 15 V 670 pF @ 10 V 670 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 47W (Tc) 3.8W (Ta), 71W (Tc) 35W (Tc) 35W (Tc) 210W (Tc) 330W (Tc) 47W (Tc) 47W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK D2PAK TO-220AB D2PAK D2PAK D2PAK TO-262 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

Related Product By Categories

IRFP260MPBF
IRFP260MPBF
Infineon Technologies
MOSFET N-CH 200V 50A TO247AC
IRLL014TRPBF
IRLL014TRPBF
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
PJA138L_R1_00001
PJA138L_R1_00001
Panjit International Inc.
SOT-23, MOSFET
IPW60R099P6XKSA1
IPW60R099P6XKSA1
Infineon Technologies
MOSFET N-CH 600V 37.9A TO247-3
CSD25304W1015
CSD25304W1015
Texas Instruments
MOSFET P-CH 20V 3A 6DSBGA
IPT012N06NATMA1
IPT012N06NATMA1
Infineon Technologies
MOSFET N-CH 60V 240A 8HSOF
IXTQ480P2
IXTQ480P2
IXYS
MOSFET N-CH 500V 52A TO3P
BSO4420
BSO4420
Infineon Technologies
MOSFET N-CH 30V 13A 8SO
IXFC36N50P
IXFC36N50P
IXYS
MOSFET N-CH 500V 19A ISOPLUS220
NDDP010N25AZ-1H
NDDP010N25AZ-1H
onsemi
MOSFET N-CH 250V 10A IPAK/TP
BUK78150-55A,135
BUK78150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT223
BUK7C2R2-60EJ
BUK7C2R2-60EJ
NXP USA Inc.
MOSFET N-CH 60V 200A D2PAK-7

Related Product By Brand

24VBATTSWITCHDEMOTOBO1
24VBATTSWITCHDEMOTOBO1
Infineon Technologies
EVAL 24V ADR SWITCH
BAS40-07E6327
BAS40-07E6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
IPU95R2K0P7AKMA1
IPU95R2K0P7AKMA1
Infineon Technologies
MOSFET N-CH 950V 4A TO251-3
IRLR3714ZTRR
IRLR3714ZTRR
Infineon Technologies
MOSFET N-CH 20V 37A DPAK
IPB65R065C7ATMA1
IPB65R065C7ATMA1
Infineon Technologies
MOSFET N-CH 600V 7.3A D2PAK
XMC1403Q040X0200AAXUMA1
XMC1403Q040X0200AAXUMA1
Infineon Technologies
IC MCU 32BIT 200KB FLASH 40VQFN
XMC4104Q48F64BAXUMA1
XMC4104Q48F64BAXUMA1
Infineon Technologies
IC MCU 32BIT 64KB FLASH 48VQFN
CY8C3444PVI-118
CY8C3444PVI-118
Infineon Technologies
IC MCU 8BIT 16KB FLASH 48SSOP
S25FL064LABMFB003
S25FL064LABMFB003
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 16SOIC
CY7C1062GE30-10BGXI
CY7C1062GE30-10BGXI
Infineon Technologies
IC SRAM 16MBIT PARALLEL 119PBGA
S34ML04G200BHB003
S34ML04G200BHB003
Infineon Technologies
IC FLASH 2GBIT PARALLEL 63BGA
S29GL128N11FFBR23
S29GL128N11FFBR23
Infineon Technologies
IC FLASH MEMORY NOR PARALLEL