IRL3714PBF
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Infineon Technologies IRL3714PBF

Manufacturer No:
IRL3714PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3714PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 36A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):47W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRL3714PBF IRL3715PBF   IRL3714SPBF   IRL3714ZPBF   IRL3716PBF   IRL3713PBF   IRL3714LPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V 20 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 54A (Tc) 36A (Tc) 36A (Tc) 180A (Tc) 260A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 18A, 10V 14mOhm @ 26A, 10V 20mOhm @ 18A, 10V 16mOhm @ 15A, 10V 4mOhm @ 90A, 10V 3mOhm @ 38A, 10V 20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 2.55V @ 250µA 3V @ 250µA 2.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 4.5 V 17 nC @ 4.5 V 9.7 nC @ 4.5 V 7.2 nC @ 4.5 V 79 nC @ 4.5 V 110 nC @ 4.5 V 9.7 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 10 V 1060 pF @ 10 V 670 pF @ 10 V 550 pF @ 10 V 5090 pF @ 10 V 5890 pF @ 15 V 670 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 47W (Tc) 3.8W (Ta), 71W (Tc) 47W (Tc) 35W (Tc) 210W (Tc) 330W (Tc) 47W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB D2PAK TO-220AB TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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