IRL3714LPBF
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Infineon Technologies IRL3714LPBF

Manufacturer No:
IRL3714LPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3714LPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 36A TO262
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):47W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IRL3714LPBF IRL3716LPBF   IRL3714PBF   IRL3714SPBF   IRL3715LPBF   IRL3714ZPBF   IRL3714ZLPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 180A (Tc) 36A (Tc) 36A (Tc) 54A (Tc) 36A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 18A, 10V 4mOhm @ 90A, 10V 20mOhm @ 18A, 10V 20mOhm @ 18A, 10V 14mOhm @ 26A, 10V 16mOhm @ 15A, 10V 16mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 2.55V @ 250µA 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 4.5 V 79 nC @ 4.5 V 9.7 nC @ 4.5 V 9.7 nC @ 4.5 V 17 nC @ 4.5 V 7.2 nC @ 4.5 V 7.2 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 10 V 5090 pF @ 10 V 670 pF @ 10 V 670 pF @ 10 V 1060 pF @ 10 V 550 pF @ 10 V 550 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 47W (Tc) 210W (Tc) 47W (Tc) 47W (Tc) 3.8W (Ta), 71W (Tc) 35W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-262 TO-262 TO-220AB D2PAK TO-262 TO-220AB TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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