IRL3302S
  • Share:

Infineon Technologies IRL3302S

Manufacturer No:
IRL3302S
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3302S Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 39A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:39A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 7V
Rds On (Max) @ Id, Vgs:20mOhm @ 23A, 7V
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):57W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
483

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRL3302S IRL3303S   IRL3502S   IRL3402S   IRL3102S   IRL3202S   IRL3302   IRL3302L  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V 20 V 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 39A (Tc) 38A (Tc) 110A (Tc) 85A (Tc) 61A (Tc) 48A (Tc) 39A (Tc) 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V 4.5V, 10V 4.5V, 7V 4.5V, 7V 4.5V, 7V 4.5V, 7V 4.5V, 7V 4.5V, 7V
Rds On (Max) @ Id, Vgs 20mOhm @ 23A, 7V 26mOhm @ 20A, 10V 7mOhm @ 64A, 7V 8mOhm @ 51A, 7V 13mOhm @ 37A, 7V 16mOhm @ 29A, 7V 20mOhm @ 23A, 7V 20mOhm @ 23A, 7V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 1V @ 250µA 700mV @ 250µA (Min) 700mV @ 250µA (Min) 700mV @ 250µA (Min) 700mV @ 250µA (Min) 700mV @ 250µA (Min) 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 4.5 V 26 nC @ 4.5 V 110 nC @ 4.5 V 78 nC @ 4.5 V 58 nC @ 4.5 V 43 nC @ 4.5 V 31 nC @ 4.5 V 31 nC @ 4.5 V
Vgs (Max) ±10V ±16V ±10V ±10V ±10V ±10V ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 15 V 870 pF @ 25 V 4700 pF @ 15 V 3300 pF @ 15 V 2500 pF @ 15 V 2000 pF @ 15 V 1300 pF @ 15 V 1300 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 57W (Tc) 3.8W (Ta), 68W (Tc) 140W (Tc) 110W (Tc) 89W (Tc) 69W (Tc) 57W (Tc) 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK TO-220AB TO-262-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

HUFA75344S3
HUFA75344S3
Fairchild Semiconductor
MOSFET N-CH 55V 75A I2PAK
DMN6068LK3-13
DMN6068LK3-13
Diodes Incorporated
MOSFET N-CH 60V 6A TO252-3
SSM3K127TU,LF
SSM3K127TU,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 2A UFM
BUK6D30-40EX
BUK6D30-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 6A/18A 6DFN
RM12N650IP
RM12N650IP
Rectron USA
MOSFET N-CH 650V 11.5A TO251
BSS87H6327XTSA1
BSS87H6327XTSA1
Infineon Technologies
MOSFET N-CH 240V 260MA SOT89-4
AUIRFR8401TRL
AUIRFR8401TRL
Infineon Technologies
MOSFET N-CH 40V 100A DPAK
SIHB24N65E-GE3
SIHB24N65E-GE3
Vishay Siliconix
MOSFET N-CH 650V 24A D2PAK
STP120NF04
STP120NF04
STMicroelectronics
MOSFET N-CH 40V 120A TO220AB
FQB85N06TM_AM002
FQB85N06TM_AM002
onsemi
MOSFET N-CH 60V 85A D2PAK
IRF7703GTRPBF
IRF7703GTRPBF
Infineon Technologies
MOSFET P-CH 40V 6A 8TSSOP
AO3404
AO3404
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 5A SOT23-3

Related Product By Brand

ESD5V3U1U-02LS E6327
ESD5V3U1U-02LS E6327
Infineon Technologies
TVS DIODE 5.3VWM 28VC TSSLP-2
IRF6678TR1
IRF6678TR1
Infineon Technologies
MOSFET N-CH 30V 30A DIRECTFET
IRL3714ZLPBF
IRL3714ZLPBF
Infineon Technologies
MOSFET N-CH 20V 36A TO262
BSP92P E6327
BSP92P E6327
Infineon Technologies
MOSFET P-CH 250V 260MA SOT223-4
SAF-TC1115-L150EB BB
SAF-TC1115-L150EB BB
Infineon Technologies
IC MCU 32BIT ROMLESS 208LBGA
MB89665PF-GT-156-BND
MB89665PF-GT-156-BND
Infineon Technologies
IC MCU 8BIT 16KB MROM 64QFP
MB90F020CPMT-GS-9038
MB90F020CPMT-GS-9038
Infineon Technologies
IC MCU 120LQFP
MB89935BPFV-GS-345E1
MB89935BPFV-GS-345E1
Infineon Technologies
IC MCU 8BIT 16KB MROM 30SSOP
MB91016PFV-GS-110K5E1
MB91016PFV-GS-110K5E1
Infineon Technologies
IC MCU 144LQFP
CY7C1515JV18-300BZI
CY7C1515JV18-300BZI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
S25FL129P0XMFV000M
S25FL129P0XMFV000M
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
S29GL064S90BHI043
S29GL064S90BHI043
Infineon Technologies
IC FLASH 64MBIT PARALLEL 48FBGA