IRL3103D2S
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Infineon Technologies IRL3103D2S

Manufacturer No:
IRL3103D2S
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3103D2S Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 54A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:2300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRL3103D2S IRL3103D1S   IRL3103D2  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 54A (Tc) 64A (Tc) 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 32A, 10V 14mOhm @ 34A, 10V 14mOhm @ 32A, 10V
Vgs(th) (Max) @ Id - 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V 43 nC @ 4.5 V 44 nC @ 4.5 V
Vgs (Max) ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 25 V 1900 pF @ 25 V 2300 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - 3.1W (Ta), 89W (Tc) 2W (Ta), 70W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Through Hole
Supplier Device Package D2PAK D2PAK TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3

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