IRL3103D2PBF
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Infineon Technologies IRL3103D2PBF

Manufacturer No:
IRL3103D2PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3103D2PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 54A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:2300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta), 70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRL3103D2PBF IRL3103D1PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 54A (Tc) 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 32A, 10V 14mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V 43 nC @ 4.5 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 25 V 1900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2W (Ta), 70W (Tc) 2W (Ta), 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3

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