IRL3102STRR
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Infineon Technologies IRL3102STRR

Manufacturer No:
IRL3102STRR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRL3102STRR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 61A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 7V
Rds On (Max) @ Id, Vgs:13mOhm @ 37A, 7V
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):89W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRL3102STRR IRL3103STRR   IRL3202STRR   IRL3302STRR   IRL3402STRR   IRL3502STRR   IRL3102STRL  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 61A (Tc) 64A (Tc) 48A (Tc) 39A (Tc) 85A (Tc) 110A (Tc) 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V 4.5V, 10V 4.5V, 7V 4.5V, 7V 4.5V, 7V 4.5V, 7V 4.5V, 7V
Rds On (Max) @ Id, Vgs 13mOhm @ 37A, 7V 12mOhm @ 34A, 10V 16mOhm @ 29A, 7V 20mOhm @ 23A, 7V 8mOhm @ 51A, 7V 7mOhm @ 64A, 7V 13mOhm @ 37A, 7V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 1V @ 250µA 700mV @ 250µA (Min) 700mV @ 250µA (Min) 700mV @ 250µA (Min) 700mV @ 250µA (Min) 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 4.5 V 33 nC @ 4.5 V 43 nC @ 4.5 V 31 nC @ 4.5 V 78 nC @ 4.5 V 110 nC @ 4.5 V 58 nC @ 4.5 V
Vgs (Max) ±10V ±16V ±10V ±10V ±10V ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 15 V 1650 pF @ 25 V 2000 pF @ 15 V 1300 pF @ 15 V 3300 pF @ 15 V 4700 pF @ 15 V 2500 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 89W (Tc) 94W (Tc) 69W (Tc) 57W (Tc) 110W (Tc) 140W (Tc) 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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