IRL3102S
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Infineon Technologies IRL3102S

Manufacturer No:
IRL3102S
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3102S Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 61A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 7V
Rds On (Max) @ Id, Vgs:13mOhm @ 37A, 7V
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):89W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRL3102S IRL3103S   IRL3502S   IRL3202S   IRL3302S   IRL3402S   IRL3102   IRL3102L  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V 20 V 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 61A (Tc) 64A (Tc) 110A (Tc) 48A (Tc) 39A (Tc) 85A (Tc) 61A (Tc) 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V 4.5V, 10V 4.5V, 7V 4.5V, 7V 4.5V, 7V 4.5V, 7V 4.5V, 7V 4.5V, 7V
Rds On (Max) @ Id, Vgs 13mOhm @ 37A, 7V 12mOhm @ 34A, 10V 7mOhm @ 64A, 7V 16mOhm @ 29A, 7V 20mOhm @ 23A, 7V 8mOhm @ 51A, 7V 13mOhm @ 37A, 7V 13mOhm @ 37A, 7V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 1V @ 250µA 700mV @ 250µA (Min) 700mV @ 250µA (Min) 700mV @ 250µA (Min) 700mV @ 250µA (Min) 700mV @ 250µA (Min) 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 4.5 V 33 nC @ 4.5 V 110 nC @ 4.5 V 43 nC @ 4.5 V 31 nC @ 4.5 V 78 nC @ 4.5 V 58 nC @ 4.5 V 58 nC @ 4.5 V
Vgs (Max) ±10V ±16V ±10V ±10V ±10V ±10V ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 15 V 1650 pF @ 25 V 4700 pF @ 15 V 2000 pF @ 15 V 1300 pF @ 15 V 3300 pF @ 15 V 2500 pF @ 15 V 2500 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 89W (Tc) 94W (Tc) 140W (Tc) 69W (Tc) 57W (Tc) 110W (Tc) 89W (Tc) 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK TO-220AB TO-262-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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