IRL3102PBF
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Infineon Technologies IRL3102PBF

Manufacturer No:
IRL3102PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL3102PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 61A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 7V
Rds On (Max) @ Id, Vgs:13mOhm @ 37A, 7V
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):89W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRL3102PBF IRL3202PBF   IRL3302PBF   IRL3103PBF   IRL3102SPBF   IRL3402PBF   IRL3502PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 30 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 61A (Tc) 48A (Tc) 39A (Tc) 64A (Tc) 61A (Tc) 85A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V 4.5V, 7V 4.5V, 7V 4.5V, 10V 4.5V, 7V 4.5V, 7V 4.5V, 7V
Rds On (Max) @ Id, Vgs 13mOhm @ 37A, 7V 16mOhm @ 29A, 7V 20mOhm @ 23A, 7V 12mOhm @ 34A, 10V 13mOhm @ 37A, 7V 8mOhm @ 51A, 7V 7mOhm @ 64A, 7V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 700mV @ 250µA (Min) 700mV @ 250µA (Min) 1V @ 250µA 700mV @ 250µA (Min) 700mV @ 250µA (Min) 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 4.5 V 43 nC @ 4.5 V 31 nC @ 4.5 V 33 nC @ 4.5 V 58 nC @ 4.5 V 78 nC @ 4.5 V 110 nC @ 4.5 V
Vgs (Max) ±10V ±10V ±10V ±16V ±10V ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 15 V 2000 pF @ 15 V 1300 pF @ 15 V 1650 pF @ 25 V 2500 pF @ 15 V 3300 pF @ 15 V 4700 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 89W (Tc) 69W (Tc) 57W (Tc) 94W (Tc) 89W (Tc) 110W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB D2PAK TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3

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