IRL2910STRRPBF
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Infineon Technologies IRL2910STRRPBF

Manufacturer No:
IRL2910STRRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRL2910STRRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 55A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:26mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock

$2.38
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Similar Products

Part Number IRL2910STRRPBF IRL2910STRLPBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc) 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4V, 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 29A, 10V 26mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 5 V 140 nC @ 5 V
Vgs (Max) - ±16V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25 V 3700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 3.8W (Ta), 200W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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