Infineon Technologies-IRL2910L - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Rds On (Max) @ Id, Vgs:	26mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	140 nC @ 5 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	3700 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	3.8W (Ta), 200W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-262
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

Infineon Technologies IRL2910L