IRL1404ZS
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Infineon Technologies IRL1404ZS

Manufacturer No:
IRL1404ZS
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRL1404ZS Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 75A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.1mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:5080 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):230W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRL1404ZS IRL1404S   IRL1404ZL  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 160A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.3V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 75A, 10V 4mOhm @ 95A, 10V 3.1mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 3V @ 250µA 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 5 V 140 nC @ 5 V 110 nC @ 5 V
Vgs (Max) ±16V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 5080 pF @ 25 V 6600 pF @ 25 V 5080 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 230W (Tc) 3.8W (Ta), 200W (Tc) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole
Supplier Device Package D2PAK D2PAK TO-262
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA

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