Infineon Technologies-IRGR3B60KD2PBF - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	7.8 A
Current - Collector Pulsed (Icm):	15.6 A
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 3A
Power - Max:	52 W
Switching Energy:	62µJ (on), 39µJ (off)
Input Type:	Standard
Gate Charge:	13 nC
Td (on/off) @ 25°C:	18ns/110ns
Test Condition:	400V, 3A, 100Ohm, 15V
Reverse Recovery Time (trr):	77 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak

Infineon Technologies IRGR3B60KD2PBF