Infineon Technologies-IRGR2B60KDPBF - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	6.3 A
Current - Collector Pulsed (Icm):	8 A
Vce(on) (Max) @ Vge, Ic:	2.25V @ 15V, 2A
Power - Max:	35 W
Switching Energy:	74µJ (on), 39µJ (off)
Input Type:	Standard
Gate Charge:	12 nC
Td (on/off) @ 25°C:	11ns/150ns
Test Condition:	400V, 2A, 100Ohm, 15V
Reverse Recovery Time (trr):	68 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak

Infineon Technologies IRGR2B60KDPBF