Infineon Technologies-IRGPS60B120KDP - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	105 A
Current - Collector Pulsed (Icm):	240 A
Vce(on) (Max) @ Vge, Ic:	2.75V @ 15V, 60A
Power - Max:	595 W
Switching Energy:	3.21mJ (on), 4.78mJ (off)
Input Type:	Standard
Gate Charge:	340 nC
Td (on/off) @ 25°C:	-
Test Condition:	600V, 15A, 4.7Ohm, 15V
Reverse Recovery Time (trr):	180 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-274AA
Supplier Device Package:	SUPER-247™ (TO-274AA)

Infineon Technologies IRGPS60B120KDP