Infineon Technologies-IRGP50B60PD1-EP - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	75 A
Current - Collector Pulsed (Icm):	150 A
Vce(on) (Max) @ Vge, Ic:	2.85V @ 15V, 50A
Power - Max:	390 W
Switching Energy:	255µJ (on), 375µJ (off)
Input Type:	Standard
Gate Charge:	205 nC
Td (on/off) @ 25°C:	30ns/130ns
Test Condition:	390V, 33A, 3.3Ohm, 15V
Reverse Recovery Time (trr):	42 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3 Full Pack
Supplier Device Package:	TO-247AD

Infineon Technologies IRGP50B60PD1-EP