Infineon Technologies-IRGP35B60PD-EP - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	60 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	2.55V @ 15V, 35A
Power - Max:	308 W
Switching Energy:	220µJ (on), 215µJ (off)
Input Type:	Standard
Gate Charge:	160 nC
Td (on/off) @ 25°C:	26ns/110ns
Test Condition:	390V, 22A, 3.3Ohm, 15V
Reverse Recovery Time (trr):	42 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AD

Infineon Technologies IRGP35B60PD-EP