Infineon Technologies-IRGP30B60KD-EP - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	60 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	2.35V @ 15V, 30A
Power - Max:	304 W
Switching Energy:	350µJ (on), 825µJ (off)
Input Type:	Standard
Gate Charge:	102 nC
Td (on/off) @ 25°C:	46ns/185ns
Test Condition:	400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):	125 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AD

Infineon Technologies IRGP30B60KD-EP