Infineon Technologies-IRGP30B120KD-EP - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	60 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	4V @ 15V, 60A
Power - Max:	300 W
Switching Energy:	1.07mJ (on), 1.49mJ (off)
Input Type:	Standard
Gate Charge:	169 nC
Td (on/off) @ 25°C:	-
Test Condition:	600V, 25A, 5Ohm, 15V
Reverse Recovery Time (trr):	300 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AD

Infineon Technologies IRGP30B120KD-EP