Infineon Technologies-IRGIB6B60KD116P - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	11 A
Current - Collector Pulsed (Icm):	22 A
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 5A
Power - Max:	38 W
Switching Energy:	110µJ (on), 135µJ (off)
Input Type:	Standard
Gate Charge:	18.2 nC
Td (on/off) @ 25°C:	25ns/215ns
Test Condition:	400V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr):	70 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220AB Full-Pak

Infineon Technologies IRGIB6B60KD116P