Infineon Technologies-IRGB20B60PD1PBF - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	40 A
Current - Collector Pulsed (Icm):	80 A
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 20A
Power - Max:	215 W
Switching Energy:	95µJ (on), 100µJ (off)
Input Type:	Standard
Gate Charge:	68 nC
Td (on/off) @ 25°C:	20ns/115ns
Test Condition:	390V, 13A, 10Ohm, 15V
Reverse Recovery Time (trr):	28 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

Infineon Technologies IRGB20B60PD1PBF