Infineon Technologies-IRG8P08N120KD-EPBF - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	15 A
Current - Collector Pulsed (Icm):	15 A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 5A
Power - Max:	89 W
Switching Energy:	300µJ (on), 300µJ (off)
Input Type:	Standard
Gate Charge:	45 nC
Td (on/off) @ 25°C:	20ns/160ns
Test Condition:	600V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr):	50 ns
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AD

Infineon Technologies IRG8P08N120KD-EPBF