Infineon Technologies-IRG7PSH54K10DPBF - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	120 A
Current - Collector Pulsed (Icm):	200 A
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 50A
Power - Max:	520 W
Switching Energy:	4.8mJ (on), 2.8mJ (off)
Input Type:	Standard
Gate Charge:	435 nC
Td (on/off) @ 25°C:	110ns/490ns
Test Condition:	600V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr):	170 ns
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	SUPER-247™ (TO-274AA)

Infineon Technologies IRG7PSH54K10DPBF