Infineon Technologies-IRG7PK35UD1-EPBF - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1400 V
Current - Collector (Ic) (Max):	40 A
Current - Collector Pulsed (Icm):	200 A
Vce(on) (Max) @ Vge, Ic:	2.35V @ 15V, 20A
Power - Max:	167 W
Switching Energy:	650µJ (off)
Input Type:	Standard
Gate Charge:	98 nC
Td (on/off) @ 25°C:	-/150ns
Test Condition:	600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AD

Infineon Technologies IRG7PK35UD1-EPBF