Infineon Technologies-IRG7PH50K10D-EPBF - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	90 A
Current - Collector Pulsed (Icm):	160 A
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 35A
Power - Max:	400 W
Switching Energy:	2.3mJ (on), 1.6mJ (off)
Input Type:	Standard
Gate Charge:	300 nC
Td (on/off) @ 25°C:	90ns/340ns
Test Condition:	600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr):	130 ns
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AD

Infineon Technologies IRG7PH50K10D-EPBF